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BU1501 00221 TB7100F C4094 ALA2F12 83C51 TA1542A 210EMB
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 JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
WBFBP-03B Plastic-Encapsulate Transistors
C
MMBT3904M
TRANSISTOR
WBFBP-03B
(1.2x1.2x0.5) unit: mm
DESCRIPTION NPN Epitaxial Silicon Transistor FEATURES
Epitaxial Planar Die Construction Complementary PNP Type Available (MMBT3906M) Ultra-Small Surface Mount Package Also Available in Lead Free Version
TOP
B
1. BASE 2. EMITTER 3. COLLECTOR
E C
BACK
APPLICATION General Purpose Amplifier, switching For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM, DVD-ROM, Note book PC, etc.) MARKING:1N
C
E
B
1N
B E Symbol VCBO VCEO VEBO IC PC TJ Tstg Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Dissipation Junction Temperature Storage Temperature Parameter Value 60 40 6 0.2 0.15 150 -55-150 Units V V V A W
MAXIMUM RATINGS* TA=25 unless otherwise noted

ELECTRICAL CHARACTERISTICS (Tamb=25
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICEX IEBO hFE(1) hFE(2) DC current gain hFE(3) hFE(4) hFE(5) Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 fT
unless
Test
otherwise
conditions
specified)
MIN 60 40 6 0.05 0.1 40 70 100 60 30 0.2 0.3 0.65 300 0.85 0.95 V V V V MHz 300 TYP MAX UNIT V V V A A
IC=10A,IE=0 IC=1mA,IB=0 IE=10A,IC=0 VCE=30V,VEB(off)=3V VEB=5V,IC=0 VCE=1V,IC=0.1mA VCE=1V,IC=1mA VCE=1V,IC=10mA VCE=1V,IC=50mA VCE=1V,IC=100mA IC=10mA,IB=1mA IC=50mA,IB=5mA IC=10mA,IB=1mA IC=50mA,IB=5mA VCE=20V,IC=10mA,f=100MHz
ELECTRICAL CHARACTERISTICS (Tamb=25
Parameter Collector output capacitance Noise figure Delay time Rise time Storage time Fall time Symbol Cob NF td tr tS tf
unless
Test
otherwise
conditions
specified)
MIN TYP MAX 4 5 35 35 200 50 UNIT pF dB nS nS nS nS
VCB=5V,IE=0,f=1MHz VCE=5V,Ic=0.1mA, VCC=3V, VBEoff=-0.5V, IC=10mA , IB1=1mA VCC=3V, IC=10mA IB1= IB2= 1mA
Typical Characteristics
MMBT3904M
Sym bol A A1 b b1 b2 D E D2 E2 e L L1 L2 k z
D im e n s io n s In M illim e t e r s M in . M ax. 0 .4 5 0 0 .5 5 0 0 .0 1 0 0 .0 9 0 0 .1 7 0 0 .2 7 0 0 .2 7 0 0 .3 7 0 0 .2 5 0 R E F . 1 .1 5 0 1 .2 5 0 1 .1 5 0 1 .2 5 0 0 .4 7 0 R E F . 0 .8 1 0 R E F . 0 .8 0 0 T Y P . 0 .2 8 0 R E F . 0 .2 3 0 R E F . 0 .1 5 0 R E F . 0 .3 0 0 R E F . 0 .0 9 0 R E F .
D im e n s io n s In In c h e s M in . M ax. 0 .0 1 8 0 .0 2 2 0 .0 0 0 0 .0 0 4 0 .0 0 7 0 .0 1 1 0 .0 1 1 0 .0 1 5 0 .0 1 0 R E F . 0 .0 4 5 0 .0 4 9 0 .0 4 5 0 .0 4 9 0 .0 0 2 R E F . 0 .0 3 2 R E F . 0 .0 3 2 T Y P . 0 .0 1 1 R E F . 0 .0 0 9 R E F . 0 .0 0 6 R E F . 0 .0 1 2 R E F . 0 .0 0 4 R E F .


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